| Etablissement | Université de Boumerdès - M'hamed Bougara |
| Affiliation | Département Electrique |
| Auteur | RAHMOUNE, Fayçal |
| Directeur de thèse | Refoufi Labri (Maitre de conférence) |
| Filière | Génie Electronique |
| Diplôme | Magister |
| Titre | Experimental investigation of the charge pumping current in integrated MOS transistors |
| Mots clés | MOS (électronique) ; Metal oxide semiconductors |
| Résumé | The aim of this work is the investigation of the charge pumping technique through the variation of the gate voltage pulse width. The main part of this work is related to the investigation of the carge pumping current of MOSFETS and its dependence on the time and voltage parameters of the input gate pulses… |
| Date de soutenance | 1998 |
| Cote | 621.3(043.2)/A83/RAH |
| Pagination | 80 p. |
| Illusatration | ill. |
| Format | 30 cm |
| Statut | Traitée |