| Etablissement | Université de Batna 1 - Hadj Lakhder | | Affiliation | Département de Physique | | Auteur | BENTERCIA, Toufik | | Directeur de thèse | Djeffal Fayçal (Maitre de conférence) | | Filière | Physique du solide : Semi –Conducteur | | Diplôme | Doctorat | | Titre | Study and modeling of multigate nanoscale MOSFETs including quantum and traps effects: Application to the nanoscale devices design | | Mots clés | Nanoscale MOSFETs, Hot carrier degradation, Quantum effects,Compact modeling | | Résumé | Intensive downscaling of bulk CMOS has been the major driver of the semiconductor industry in the past few decades. However, standard, bulk CMOS transistors suffer from several short-channel effects as their lengths are scaled to a few decananometer dimensions, in addition to the hot carrier degradation effects resulted from the interface traps generation. Among the proposed replacement to standard bulk CMOS for devices down to ~ 10 nm in channel length are the multigate MOSFETs. To predict the performance of these multi MOSFETs, accurate, compact models are required. However, using classical physics to describe the properties of multigate MOSFET results in inaccurate predictions of their electrical characteristics.
Our aim in this thesis is to incorporate quantum physics to develop analytical models for multigate nanoscale MOSFETs including traps effects without the need of fitting parameters. An important consequence of these compact models consists in their ability to be inserted into simulation programs such as SPICE, thus overcoming limitations when only classical physics is used. | | Statut | Validé |
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