| Etablissement | Université de Batna 2 - Mustafa Ben Boulaid | | Affiliation | Département d'Electronique | | Auteur | BENDIB, Toufik | | Directeur de thèse | DJEFFAL FAÇAL (Maitre de conférence) | | Filière | Electronique | | Diplôme | Doctorat | | Titre | Contribution to the modeling and improvement of the nanoscale multigate transistors: Application to the nanoscale circuits design | | Mots clés | nanoscale multigate transistors, short channel effect, nanoscale circuits design. | | Résumé | Interest in nanoelectronics digital devices is growing rapidly, thanks to advances in the processing of materials at nanoscale level. Periodic published statistics about semiconductor industry confirm such growth to be in good accordance with Moor’s law, so that prominent consequences are predicted especially for computer hardware components design and production field.
The great strength points of the multigate MOSFET lies not only in the improvement of screening of the drain potential variation but also in the reduction of the short channel effect, which make it ideal for use as the basis of future nanoscale CMOS based devices. Unfortunately, such benefits are altered significantly in case of interfacial hot carrier presence near the drain junction in the channel; as a result a localized non uniform pileup of interface states appears in the same location. The influence of the hot carrier and short channel degradation effect on the performances of some nanoscale DG MOSFET varieties have been studied by many authors.
Our aim in this thesis is to propose and develop a new design of multigate MOSFETs based electroc field confinement approach taking into account the short channel effects. The proposed structures will be used to simulate a nanoscale devices like: inverter gate, operational amplifier,…in order to show the impact of our proposed structures on the improvement of the nanoscale electronics devices. | | Statut | Validé |
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